Current Transport Mechanism for Heavy-Ion Degraded SiC MOSFETs
نویسندگان
چکیده
منابع مشابه
Single Event Effects Induced by Heavy Ion Irradiation in SiC Power MOSFETs
Silicon Carbide power devices are becoming very popular devices in switching power converters due to their superior performances in terms of on state and switching energy losses with respect to the Silicon counterparts [1]. Some works have been dedicated to study Single Event Effects (SEEs) induced by irradiations in SiC power diodes [2-5] and MESFETs [6]. Total IonizationDose Effects, TID, hav...
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ژورنال
عنوان ژورنال: IEEE Transactions on Nuclear Science
سال: 2019
ISSN: 0018-9499,1558-1578
DOI: 10.1109/tns.2019.2907669